XCV2000E-7BG560I Of Xilinx Inc Under NSN 5962-01-575-4820 Microcircuit Memory - Submit RFQ

Mfg Part Number: XCV2000E-7BG560I	Alternate P/N: XCV2000E7BG560I	NSN : 5962-01-575-4820
NIIN : 015754820	CAGE Code : 68994	Manufacturer: Xilinx Inc
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

Thank you for choosing to rely on NSN 3Sixty for NSN part XCV2000E-7BG560I and FSC 5962 Microcircuits Electronic under Microcircuit Memory under NIIN 015754820 with. You have reached our NSN RFQ Page where you can request quotes for our most top-requested NSN 5962-01-575-4820 components such as Microcircuit Memory manufactured by Xilinx Inc with CAGE Code 68994. Some of the products we have in stock include part number XCV2000E-7BG560I, and various others NSN parts, those of which have been thoroughly assessed for quality and functionality. At NSN 3Sixty, we distinguish ourselves from other distributors in our steadfast commitment to providing person-to-person communication at every stage of the procurement process, offering rapid turnaround times, unmatched cost savings, and exceptional customer service.

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Characteristics Data of NSN 5962-01-575-4820, 5962015754820

MRC	Criteria	Characteristic
MRC	Decoded Requirement	Clear Text Reply
CBBL	Features Provided	ASYNCHRONOUS AND CASCADABLE AND BIDIRECTIONAL AND EDGE TRIGGERED AND HIGH PERFORMANCE AND HIGH SPEED AND LOW POWER AND PROGRAMMABLE AND W/CLOCK
AFGA	Operating Temp Range	-40.0/+100.0 DEG CELSIUS
CQSJ	Inclosure Material	METAL
CXCY	Part Name Assigned By Controlling Agency	VIRTEX II FIELD PROGRAMMABLE GATE ARRAY
ADAT	Body Width	3.2 MILLIMETERS NOMINAL
CQSZ	Inclosure Configuration	PIN GRID ARRAY
FEAT	Special Features	FLIP FLOP; ESD PROTECTED
ADAQ	Body Length	42.5 MILLIMETERS NOMINAL
TTQY	Terminal Type And Quantity	560 PIN
ADAU	Body Height	40.6 MILLIMETERS NOMINAL
CZEQ	Time Rating Per Chacteristic	7.00 NANOSECONDS NOMINAL DELAY
CZEN	Voltage Rating And Type Per Characteristic	1.8 VOLTS NOMINAL TOTAL SUPPLY
CZER	Memory Device Type	RAM
CQWX	Output Logic Form	COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC