Mfg Part Number: IM5603AM | NSN : 5962-01-098-7660 | NIIN : 010987660 |
CAGE Code : 32293 | Manufacturer: Intersil Corporation | Item Name : Microcircuit Memory |
FSC : 5962 Microcircuits Electronic |
Thank you for choosing to rely on NSN 3Sixty for NSN part IM5603AM and FSC 5962 Microcircuits Electronic under Microcircuit Memory under NIIN 010987660 with. You have reached our NSN RFQ Page where you can request quotes for our most top-requested NSN 5962-01-098-7660 components such as Microcircuit Memory manufactured by Intersil Corporation with CAGE Code 32293. Some of the products we have in stock include part number IM5603AM, and various others NSN parts, those of which have been thoroughly assessed for quality and functionality. At NSN 3Sixty, we distinguish ourselves from other distributors in our steadfast commitment to providing person-to-person communication at every stage of the procurement process, offering rapid turnaround times, unmatched cost savings, and exceptional customer service.
NSN 3Sixty receives praise for making quality the cornerstone of its operations, ensuring that our customers never have to worry about the integrity of our products. The NSN 5962-01-098-7660 products that we feature by Intersil Corporation are paired alongside their corresponding CAGE Code 32293. Furthermore, the NSN items we carry are thoroughly assessed for reliability and authenticity. Get part IM5603AM that suits your operations, we invite you to fill out and submit an RFQ form for your comparisons. For additional questions, you can call or email us directly; we are available 24/7x365!
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 890 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 320 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 125 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND PROGRAMMABLE AND BURN IN |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
MEMORY | CRHL | BIT QUANTITY1024 |
MEMORY | CSWJ | WORD QUANTITY256 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC100 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT03640-6091416 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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