Mfg Part Number: 6011016-002 | Alternate P/N: 6011016002 | NSN : 5962-01-096-2197 |
NIIN : 010962197 | CAGE Code : 12436 | Manufacturer: Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems |
Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
Thank you for choosing to rely on NSN 3Sixty for NSN part 6011016-002 and FSC 5962 Microcircuits Electronic under Microcircuit Memory under NIIN 010962197 with. You have reached our NSN RFQ Page where you can request quotes for our most top-requested NSN 5962-01-096-2197 components such as Microcircuit Memory manufactured by Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems with CAGE Code 12436. Some of the products we have in stock include part number 6011016-002, and various others NSN parts, those of which have been thoroughly assessed for quality and functionality. At NSN 3Sixty, we distinguish ourselves from other distributors in our steadfast commitment to providing person-to-person communication at every stage of the procurement process, offering rapid turnaround times, unmatched cost savings, and exceptional customer service.
NSN 3Sixty receives praise for making quality the cornerstone of its operations, ensuring that our customers never have to worry about the integrity of our products. The NSN 5962-01-096-2197 products that we feature by Bae Systems Information And Electronic Systems Integration Inc Div Bae Systems are paired alongside their corresponding CAGE Code 12436. Furthermore, the NSN items we carry are thoroughly assessed for reliability and authenticity. Get part 6011016-002 that suits your operations, we invite you to fill out and submit an RFQ form for your comparisons. For additional questions, you can call or email us directly; we are available 24/7x365!
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-096-2197 Item Description: Microcircuit Memory | 5962 | 010962197 | N | B | ||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
A | 0 | |||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
6011016-002 | 3 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 750 INCHES MINIMUM AND 0 790 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 265 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 165 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING413 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND HIGH SPEED AND WDECODED OUTPUT AND 3-STATE OUTPUT |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN13 INPUT |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 5 VOLTS MINIMUM POWER SOURCE AND 5 5 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC75 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 75 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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